Samsung is working toward creating the first petabyte SSD in history, and Hafnia ferroelectrics may be used to create the new storage device.

Reports stated that Samsung Electronics would take ten years to produce the first petabyte SSD as recently as March of last year, but fresh findings could shorten that time frame considerably. First off, a new global record of 290 layers stacked will be set by Samsung's upcoming debut of their 9th generation V-NAND flash. The manufacturer also revealed the availability of their 10th generation V-NAND flash, which has 430 layers of stacking.

Although a 1,000 terabyte or 1 petabyte single SSD may still be some years off, we recently received a sneak peek at the new technology the business is developing to help attain that storage target. Giwuk Kim, a doctoral candidate in the Electrical Engineering Department at the Korea Advanced Institute of Science and Technology (KAIST), will discuss ferroelectric characteristics of Hafnia and how they may be used to create capacitors and memories that are more compact and effective.

Notably, Samsung Electronics co-authored the work, however details of their contribution are not given. However, the report is titled "In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layer Experimental Demonstration and Modeling".